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" # $ % & ' () ! &* + ( , -* . / - 0-* * 1 ( 2% /( 3 4 d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 5* * / 67221 428 999 ! *& advanced process technology ultra low on-resistance dual p channel mosfet surface mount available in tape & reel 150c operating temperature lead-free these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. so-8 www.irf.com 1 www.irf.com 2 : . $ ( 999 999 ;4 ? ? : . $ ( 2% << 999 " 999 * / < 24 999 999 54 999 999 ! 4 + = = ( 999 999 ;4 ( ) $ 999 999 54 999 999 999 999 + ) $ ' .( 999 999 + / - ' .( 999 999 > + =( 999 999 54 > + =( 999 999 # > + ?@6 @a =( 999 999 # )(! b 02 999 999 / 2 999 " 999 54 b<< 02 999 999 / ! ? )2 999 5 999 / 5 ?, )( : $ % < % % 999 999 b% % 999 999 %) / - < % 999 # 999 c 6de )( 6b )f 028 ?: 0 a = $( = ( - ?: 0 a % g ) $ ( 999 999 54 / - / - 02 999 5 54 > / - / - 0 =( 999 !! ## * 4*; ) $ b2 / % - (h% $=2 80 27g 2% ? <( a i sd 54* # 4*; $= ;h00 i !" #$% 2 ((8 ? 2 80' 3' a 999 999 999 999 4 ' .( ' 999 ! 999 ' 999 999 d 4 ;4 ? / b / s d g s d g < 2 )/ 8 www.irf.com 3 1 10 100 0.1 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse width t = 25c j 1 10 100 0.1 1 10 100 d ds 20s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v j 1 10 100 45678910 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -15v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -3.0a d www.irf.com 4 !" # $ $ 0 200 400 600 800 1000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 5 10 15 20 25 q , total gate charge (nc) g a -v , gate-to-source voltage (v) gs i = -3.0a v = -24v ds d for test circuit see figure 12 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) 1 10 100 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms www.irf.com 5 v ds 90% 10% v gs t d(on) t r t d(off) t f 1 !"# 0.1 % !" #% &' / / j !"( ' ) *+ #% + - 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) -i , drain current (a) c d www.irf.com 6 , $ &' $ q g q gs q gd v g charge -. d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - / ? -* 80/ ? 800) @@ ? j - j '0 ? ' $ 0 ? + ? ' $' .( < 2 / / - 0< = kkj = - < = 6 2 / k // 01 /// < ' (' - - - 2 3(4 ( www.irf.com 8 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mil l ime t e r s inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rectifier logo f7101 y = last digit of the year part number lot code ww = we e k example: this is an irf7101 (mosfet) p = de s i gn at e s l e ad - f r e e product (optional) a = assembly site code notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/ www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2010 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. !! !"! |
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